BAV70M3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
(Each Diode)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(I(BR)
= 100
A)
V(BR)
100
?
V
Reverse Voltage Leakage Current (Note 3)
(VR
= 25 V, T
J
= 150
°C)
(VR
= 100 V)
(VR
= 70 V, T
J
= 150
°C)
IR
?
?
?
60
2.5
100
A
Diode Capacitance
(VR
= 0 V, f = 1.0 MHz)
CD
?
1.5
pF
Forward Voltage
(IF
= 1.0 mA)
(IF
= 10 mA)
(IF
= 50 mA)
(IF
= 150 mA)
VF
?
?
?
?
715
855
1000
1250
mV
Reverse Recovery Time RL
= 100
(IF
= I
R
= 10 mA, I
R(REC)
= 1.0 mA) (Figure 1)
trr
?
6.0
ns
3. For each individual diode while second diode is unbiased.
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak)
is equal to 10 mA.
Notes: 3. tp
? t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
VR
100 H
0.1 F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC)
= 1.0 mA
OUTPUT PULSE
(IF
= I
R
= 10 mA; MEASURED
at iR(REC)
= 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
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